Engineering graphene field effect transistors for analog applications

Pandey, Himadri; Lemme, Max Christian (Thesis advisor); Negra, Renato (Thesis advisor)

Aachen (2019, 2020)
Dissertation / PhD Thesis

Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2019

Abstract

Graphene is the first of the two-dimensional (2D) materials to have been experimentally demonstrated and is under investigation in the electronic devices research community. Graphene consists of one single layer of carbon atoms covalently bonded together in a 2D honeycomb lattice structure. It is an interesting material from the point of view of electronic device applications because of its large room temperature mobility and high carrier saturation velocity. These attributes are important for improving the device speed, which may eventually culminate into improved circuit speed. However, the absence of a band gap prohibits its application in digital electronics, while radiofrequency (RF), microwave or analog devices and their circuit applications may be attainable. Despite exceptional intrinsic carrier mobility, graphene field effect transistors integrated into conventional silicon technology; i.e., with silicon dioxide gate dielectrics, suffer from limited mobility due to

Institutions

• Chair of Electronic Devices [618710]