Influence of channel width on n- and p-type nano-wire-MOSFETs on silicon on insulator substrate
Lemme, Max C.; Mollenhauer, T.; Henschel, W.; Wahlbrink, T.; Heuser, M.; Baus, M.; Winkler, O.; Spangenberg, B.; Granzner, R.; Schwierz, F.; Kurz, Heinrich
Amsterdam [u.a.]. - Elsevier (2003)
Contribution to a conference proceedings, Journal Article
In: Microelectronic engineering
Volume: 67/68.2003
Page(s)/Article-Nr.: 810-817
Institutions
- Chair of Semiconductor Electronics and Institute of Semiconductor Electronics [616210]
- Chair of Electronic Devices [618710]
Identifier
- DOI: 10.1016/S0167-9317(03)00191-6
- RWTH PUBLICATIONS: RWTH-CONV-032863