Subthreshold behavior of triple-gate MOSFETs on SOI material
Lemme, Max C.; Mollenhauer, T.; Henschel, W.; Wahlbrink, T.; Baus, M.; Winkler, Olaf; Granzner, R.; Schwierz, F.; Spangenberg, B.; Kurz, Heinrich
Amsterdam [u.a.] : Elsevier (2004)
Journal Article
In: Solid state electronics : SSE
Volume: 48
Issue: 4
Page(s)/Article-Nr.: 529-534
Institutions
- Chair of Semiconductor Electronics and Institute of Semiconductor Electronics [616210]
- Chair of Electronic Devices [618710]
Identifier
- DOI: 10.1016/j.sse.2003.09.027
- RWTH PUBLICATIONS: RWTH-CONV-032769