Triple-gate metal-oxide-semiconductor field effect transistors fabricated with interference lithography
Lemme, Max C.; Moormann, C.; Lerch, H.; Möller, M.; Vratzov, B.; Kurz, Heinrich
Bristol : IOP Publishing Ltd. (2004)
Journal Article
In: Nanotechnology
Volume: 15
Issue: 4
Page(s)/Article-Nr.: S208-S210
Institutions
- Chair of Semiconductor Electronics and Institute of Semiconductor Electronics [616210]
- Chair of Electronic Devices [618710]
Identifier
- DOI: 10.1088/0957-4484/15/4/016
- RWTH PUBLICATIONS: RWTH-CONV-032749