Fabrication of 12 nm electrically variable shallow junction metal-oxide-semiconductor field effect transistors on silicon on insulator substrates

Henschel, W.; Wahlbrink, T.; Geogriev, Y. M.; Lemme, Max C.; Mollenhauer, T.; Vratzov, B.; Fuchs, A.; Kurz, Heinrich

New York, NY : American Institute of Physics (2003)
Journal Article

In: Journal of vacuum science & technology : JVST / B
Volume: 21
Issue: 6
Page(s)/Article-Nr.: 2975-2979


  • Chair of Semiconductor Electronics and Institute of Semiconductor Electronics [616210]
  • Chair of Electronic Devices [618710]