0.86-nm CET gate stacks with epitaxial Gd2O3 high-k dielectrics and FUSI NiSi metal electrodes

Gottlob, Heinrich Dieter Bernd; Echtermeyer, T.; Schmidt, M.; Mollenhauer, T.; Efavi, J. K.; Wahlbrink, T.; Lemme, Max C.; Czernohorsky, M.; Bugiel, E.; Fissel, A.; Osten, H. J.; Kurz, Heinrich

New York, NY : IEEE (2006)
Journal Article

In: IEEE electron device letters : EDL
Volume: 27
Issue: 10
Page(s)/Article-Nr.: 814-816


  • Chair of Semiconductor Electronics and Institute of Semiconductor Electronics [616210]
  • Chair of Electronic Devices [618710]