Publication: All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

  Image of a encapsulated field effect transistor Copyright: © Himadri Pandey and Satender Kataria

First results of the electronic properties of our research on CVD Boron Nitride encapsulated Graphene field effect transistors are presented in the recently published paper “with CMOS Compatible Metal Edge Contacts”. The work conducted was a collaboration between RWTH Aachen, AMO GmbH and Protemics GmbH. It has recently been published in IEEE Transactions on Electron Devices.

The RWTH Aachen researchers and their collaborators experimentally demonstrated for the first time FETs as well as common source voltage amplifier circuits fabricated from all CVD BN/G/BN stacks as channel material. An additional noteworthy feature of these devices and circuits is the presence of edge contacts to graphene using complementary metal oxide semiconductor (CMOS) compatible metal (Ni). This brings the much needed CMOS integration of graphene based devices and circuits one step closer to reality. Furthermore, the team also reaffirmed their electrical measurement results using non-contact tera-Hertz Time Domain Spectroscopy (THz-TDS) of the BN/G/BN stack, which is also a first study of its kind on such a 2D material stack. The highest low field mobility in such transistors was observed to be 3500 cm2/V.s while the highest THz-TDS assessed mobility was 5000 cm2/V.s. A decent intrinsic transistor voltage gain of 7.76 and a voltage amplifier gain of 6 dB were resultantly observed.

Part of these results were also recently showcased and well received at the 76th annual Device Research Conference held during June 24-27, 2018 at Santa Barbara, USA.

The research is the result of several funded research projects by the European Commission under the projects Graphene Flagship (785219) and by the German Research Foundation (DFG LE 2440/1-2 and DFG LE 2440/3-1).
Link to the paper