MOSTFLEX- Scalable MoS2 based flexible devices and circuits for wireless communications

 

With increasing connectivity between devices, internet of things (IoT) require electronic components that are smaller, lighter and flexible. Potential applications of flexible devices include wearable electronics, bendable solar cells or displays, as well as e-skin. However, this requires the development of components that are flexible, can be manufactured on a large scale and have at least the performance of existing components.

In this project, RF components are to be developed that enable wireless communication and are flexible at the same time. 2D materials, especially TMDCs (transition metal dichalcogenides), such as molybdenum disulphide (MoS₂), are suitable for the realisation of such devices. TMDCs offer some excellent properties such as mechanical flexibility and stability, high charge carrier mobilities (in semiconducting TMDCs), and good transistor properties. MoS₂ will be used in this project to develop RF circuits in the final step, which will enable wireless communication of flexible electronics.

First, however, the growth of CVD-MoS₂ must be improved to realize it at sufficiently low temperatures. Next, the first RF transistors are to be developed from the CVD-MoS₂, which will then also be linked in logic circuits. In the final step, the logic circuits will then be assembled into RF circuits that can then process the RF signals of wireless communication on a flexible substrate.

MOSTFLEX is funded by the deutschen Forschungsgemeinschaft (DFG)

Project partners:

Chair of High Frequency Electronics (HFE) der RWTH Aachen, Aachen, Germany

AMO GmbH, Aachen, Germany